Design and Performance Optimization of Dual Gate Material and Dualk Gate Dielectric Heterojunction SOI FinFET by Samjot K. Aujla
Abstract
For the fulfillment of the projections of Moore’s Law, the dimensions of the transistors which are an indispensable part of the integrated circuits must be reduced. But as the technology moves beyond 22nm, short channel effects in the planar metal-oxide-semiconductor field effect transistors became apparent which act as an impediment to the scaling. Fin shaped Field Effect Transistor (FinFET) has emerged as a ray of hope for the control of these adverse effects. Semiconductor industry has focused on these transistors and substantial thrust in the field of electronics research has been given on the refinement of the structure of these transistors. The work done in the dissertation, focus on the design of novel FinFET with Si/SiGe material for the channel forming heterojunction. Three heterojunction Silicon On Insulator (SOI) FinFET diversified by different materials for the gate and gate dielectric in stack configuration, have been compared with one another and with homojunction SOI FinFET. With this approach, the impact of varying the materials of prominent regions of the FinFET have been analyzed. Important performance parameters of the transistors have been compared. Bio-inspired approaches such as artificial neural network and genetic algorithm have been used to optimize the structure of dual gate material dual-k gate dielectric material heterojunction SOI FinFET. Performance parameters obtained after simulating the optimized structure are in close agreement with the performance parameters obtained with artificial neural network and genetic algorithm optimization.
